Call us toll-free

Continuous injection synthesis of indium arsenide …

T1 - Facile, Economic and Size-Tunable Synthesis of Metal Arsenide Nanocrystals

Approximate price

Pages:

275 Words

$19,50

Synthesis of Nanocrystalline Indium Arsenide and …

AB - The synthesis of metal arsenide semiconductor nanocrystals is challenging compared to other conventional materials (e.g., II-VI family CdSe) due to a high degree of covalency in crystal lattice and a lack of a variety of effective pnictide precursors. We reported here the use of [(Me3Si)2N]2AsCl ("arsenic silylamide") to synthesize a variety of binary and tertiary quantum confined species such as InAs (III-V), Cd3As2 (II-V), and Cu3AsS4 (enargite, I3-V-VI4) nanocrystals. The physical properties of this reagent resolve many issues, especially concerning safety, with other precursors such as pyrophoric (TMS)3As and highly toxic AsH3 gas. Furthermore, usage of this reagent has allowed for the realization of enargite quantum rods for the first time. The role of arsenic silylamide in the reaction mechanism to form InAs has been elucidated with a combination of NMR spectroscopy as well as quantum chemical modeling. Cd3As2 and Cu3AsS4 nanostructures form via a diffusion mechanism.

Synthesis of Cadmium Arsenide Quantum Dots Luminescent …

Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsH(NMe2)3–, where = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

The Synthesis of Epitaxial Gallium Arsenide Layers,

The synthesis of metal arsenide semiconductor nanocrystals is challenging compared to other conventional materials (e.g., II–VI family CdSe) due to a high degree of covalency in crystal lattice and a lack of a variety of effective pnictide precursors. We reported here the use of [(Me3Si)2N]2AsCl (“arsenic silylamide”) to synthesize a variety of binary and tertiary quantum confined species such as InAs (III–V), Cd3As2 (II–V), and Cu3AsS4 (enargite, I3–V–VI4) nanocrystals. The physical properties of this reagent resolve many issues, especially concerning safety, with other precursors such as pyrophoric (TMS)3As and highly toxic AsH3 gas. Furthermore, usage of this reagent has allowed for the realization of enargite quantum rods for the first time. The role of arsenic silylamide in the reaction mechanism to form InAs has been elucidated with a combination of NMR spectroscopy as well as quantum chemical modeling. Cd3As2 and Cu3AsS4 nanostructures form via a diffusion mechanism.

AB - Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsHx(NMe2)3-x, where x = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

Aluminium arsenide or aluminum arsenide (Al As) ..

AB - Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsHx(NMe2)3-x, where x = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

N2 - Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsHx(NMe2)3-x, where x = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

Order now
  • Indium Arsenide Nanoparticles Variant Application Uses

    Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared.

  • 29/07/2015 · 7/29/2015

    Title: Synthesis of Cadmium Arsenide Quantum Dots Luminescent in the Infrared

  • Lanthanum Arsenide | AMERICAN ELEMENTS

    28/06/2003 · Supercritical Fluid–Liquid–Solid Synthesis of Gallium Arsenide Nanowires Seeded by ..

Order now

Conference Detail for Metamaterials - SPIE

Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsHx(NMe2)3-x, where x = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

Company Background | Wafer Technology

Synthesis of colloidal nanocrystals (NC) of important arsenide nanomaterials (e.g., InAs, Cd3As2) has been limited by the lack of convenient arsenic precursors. Here we address this constraint by identifying a convenient and commercially available As precursor, tris-dimethylaminoarsine (As(NMe2)3), which can be used to prepare high quality InAs NCs with controlled size distributions. Our approach employs a reaction between InCl3 and As(NMe2)3 using diisobutylaluminum hydride (DIBAL-H) to convert As(NMe2)3 in situ into reactive intermediates AsHx(NMe2)3-x, where x = 1,2,3. NC size can be varied by changing DIBAL-H concentration and growth temperature, with colloidal solutions of InAs showing size dependent absorption and emission features tunable across wavelengths of 750 to 1450 nm. We also show that this approach works well for the colloidal synthesis of Cd3As2 NCs. By circumventing the preparation of notoriously unstable and dangerous arsenic precursors (e.g., AsH3 and As(SiMe3)3), this work improves the synthetic accessibility of arsenide-based NCs and, by extension, the potential of such NCs for use in infrared (IR) applications such as communications, fluorescent labeling and photon detection.

based producer of III-V materials and epitaxy-ready substrates

N2 - The synthesis of metal arsenide semiconductor nanocrystals is challenging compared to other conventional materials (e.g., II-VI family CdSe) due to a high degree of covalency in crystal lattice and a lack of a variety of effective pnictide precursors. We reported here the use of [(Me3Si)2N]2AsCl ("arsenic silylamide") to synthesize a variety of binary and tertiary quantum confined species such as InAs (III-V), Cd3As2 (II-V), and Cu3AsS4 (enargite, I3-V-VI4) nanocrystals. The physical properties of this reagent resolve many issues, especially concerning safety, with other precursors such as pyrophoric (TMS)3As and highly toxic AsH3 gas. Furthermore, usage of this reagent has allowed for the realization of enargite quantum rods for the first time. The role of arsenic silylamide in the reaction mechanism to form InAs has been elucidated with a combination of NMR spectroscopy as well as quantum chemical modeling. Cd3As2 and Cu3AsS4 nanostructures form via a diffusion mechanism.

Order now
  • Kim

    "I have always been impressed by the quick turnaround and your thoroughness. Easily the most professional essay writing service on the web."

  • Paul

    "Your assistance and the first class service is much appreciated. My essay reads so well and without your help I'm sure I would have been marked down again on grammar and syntax."

  • Ellen

    "Thanks again for your excellent work with my assignments. No doubts you're true experts at what you do and very approachable."

  • Joyce

    "Very professional, cheap and friendly service. Thanks for writing two important essays for me, I wouldn't have written it myself because of the tight deadline."

  • Albert

    "Thanks for your cautious eye, attention to detail and overall superb service. Thanks to you, now I am confident that I can submit my term paper on time."

  • Mary

    "Thank you for the GREAT work you have done. Just wanted to tell that I'm very happy with my essay and will get back with more assignments soon."

Ready to tackle your homework?

Place an order